2SC3112 2003-03-27 1 toshiba transistor silicon npn epitaxial type (pct process) 2SC3112 for audio amplifier and switching applications high dc current gain : h fe = 600~3600 high breakdown voltage: v ceo = 50 v high collector current: i c = 150 ma (max) maximum ratings (ta 25c) characteristics symbol rating unit collector-base voltage v cbo 50 v collector-emitter voltage v ceo 50 v emitter-base voltage v ebo 5 v collector current i c 150 ma base current i b 30 ma collector power dissipation p c 400 mw junction temperature t j 125 c storage temperature range t stg 55~125 c electrical characteristics (ta 25c) characteristics symbol test condition min typ. max unit collector cut-off current i cbo v cb 50 v, i e 0 0.1 a emitter cut-off current i ebo v eb 5 v, i c 0 0.1 a dc current gain h fe (note) v ce 6 v, i c 2 ma 600 3600 collector-emitter saturation voltage v ce (sat) i c 100 ma, i b 10 ma 0.12 0.25 v transition frequency f t v ce 10 v, i c 10 ma 100 250 mhz collector output capacitance c ob v cb 10 v, i e 0, f 1 mhz 3.5 pf nf (1) v ce 6 v, i c 0.1 ma, f 100 hz, r g 10 k 0.5 noise figure nf (2) v ce 6 v, i c 0.1 ma, f 1 khz, r g 10 k 0.3 db note: h fe classification a: 600~1800, b: 1200~3600 unit: mm jedec to-92 jeita sc-43 toshiba 2-5f1b weight: 0.21 g (typ.)
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